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Beware of Static! The trouble with MOSFETs is that they can be easily damaged by electrostatic discharges When building or servicing circuits containing MOS devices, technicians must use special equipment to ensure that their hands don t carry electrostatic charges that might ruin the components If a discharge occurs through the dielectric of a MOS device, the component is permanently destroyed Warm and humid climates do not offer total protection against the hazard This author learned that fact by ruining several MOSFETs while designing circuits in the summertime in Miami, Florida! Flexibility in Biasing In electronic circuits, an N-channel JFET can sometimes be replaced directly with an N-channel MOSFET, and P-channel devices can be similarly interchanged But the characteristic curves for MOSFETs are not the same as those for JFETs The main difference is that the S-G junction in a MOSFET is not a P-N junction Therefore, forward breakover cannot occur A gate bias voltage, EG, more positive than +06 V can be applied to an N-channel MOSFET, or an EG more negative than 06 V to a P-channel device, without a current leak taking place A family of characteristic curves for a hypothetical N-channel MOSFET is shown in the graph of Fig 23-9 Depletion Mode versus Enhancement Mode Normally the channel in a JFET is wide open; as the depletion region gets wider and wider, choking off the channel, the charge carriers are forced to pass through a narrower and narrower path This is known as the depletion mode of operation for a field effect transistor A MOSFET can also

MANAGING SQL SERVER BASED APPLICATIONS A surprise for many new DBAs is the realization that they are responsible not only for managing SQL Server and its databases, but in many organizations, they are also

desk The Desktop folder in the current user s account The Documents folder in the current user s account The Downloads folder in the current user s account

responsible for managing any applications that access the database. In some organizations, the DBA spends more time managing applications than SQL Server itself.

be made to work in the depletion mode The drawings and schematic symbols of Figs 23-7 and 23-8 show depletion-mode MOSFETs Metal-oxide semiconductor technology also allows an entirely different means of operation An enhancement-mode MOSFET normally has a pinched-off channel It is necessary to apply a bias voltage, EG, to the gate so that a channel will form If EG = 0 in an enhancement-mode MOSFET, then ID = 0 when there is no signal input The schematic symbols for N-channel and P-channel enhancement-mode devices are shown in Fig 23-10 Note that the vertical line is broken This is how you can recognize an enhancement-mode device in circuit diagrams

MANAGING TEST ENVIRONMENTS In many organizations, DBAs manage test environments that not only include test SQL

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Servers and test databases, but also test applications. The purpose of this is to allow applications (both in-house and third-party) to be tested before new versions of either the application or SQL Server are rolled out into production.

There are three different circuit hookups for FETs, just as there are for bipolar transistors These three arrangements have the source, the gate, or the drain at signal ground In the common source circuit, the source is placed at signal ground Signal input is applied to the gate The general configuration is shown in Fig 23-11 An N-channel JFET is used here, but the device could be an

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Oftentimes, DBAs have to share their knowledge with other DBAs, developers, or end users. This might be informal one-on-one tutoring, or it might include classroom training.

This is a wide-ranging task that includes multiple subtasks, such as performance monitoring, monitoring server disk space, viewing logs, ensuring jobs have run successfully, and scrutinizing for errors. Although a variety of third-party tools are available to perform these tasks, DBAs commonly spend a lot of time performing monitoring manually because they don t have a budget for such tools, or they are not familiar with them.

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N-channel, depletion-mode MOSFET and the circuit diagram would be the same For an N-channel enhancement-mode device, an extra resistor would be necessary, running from the gate to the positive power supply terminal For P-channel devices, the supply would provide a negative, rather than a positive, voltage Capacitor C1 and resistor R1 place the source at signal ground while elevating the source above ground for dc The ac signal enters through C2 Resistor R2 adjusts the input impedance and provides bias for the gate The ac signal passes out of the circuit through C3 Resistor R3 keeps the output signal from being shorted out through the power supply The circuit of Fig 23-11 is the basis for low-level RF amplifiers and oscillators The common source arrangement provides the greatest gain of the three FET circuit configurations The output is 180 out of phase with the input

NEEDS AND REQUIREMENTS ANALYSIS Whether DBAs are involved in development, or just supporting third-party applica-