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Depletion and Pinchoff The JFET works because the voltage at the gate causes an electric field that interferes, more or less, with the flow of charge carriers along the channel A simplified drawing of the situation for an N-channel device is shown in Fig 23-3 As the drain voltage ED increases, so does the drain current ID, up to a certain level-off value This is true as long as the gate voltage EG is constant, and is not too large negatively But as EG becomes increasingly negative (Fig 23-3A), a depletion region (shown as a solid dark area) begins to form in the channel Charge carriers cannot flow in this region; they must pass through a narrowed channel The more negative EG becomes, the wider the depletion region gets, as shown in drawing B Ultimately, if the gate becomes negative enough, the depletion region completely obstructs the flow of charge carriers This condition is called pinchoff, and is illustrated at C JFET Biasing Two biasing methods for N-channel JFET circuits are shown in Fig 23-4 In Fig 23-4A, the gate is grounded through resistor R2 The source resistor, R1, limits the current through the JFET The drain current, ID, flows through R3, producing a voltage across this resistor The ac output signal passes through C 2 In Fig 23-4B, the gate is connected through potentiometer R2 to a voltage that is negative with respect to ground Adjusting this potentiometer results in a variable negative EG between R2 and R3 Resistor R1 limits the current through the JFET The drain current, ID, flows through R4, producing a voltage across it The ac output signal passes through C 2 In both of these circuits, the drain is positive relative to ground For a P-channel JFET, reverse the polarities in Fig 23-4 Typical power-supply voltages in JFET circuits are comparable to those for bipolar transistor circuits The voltage between the source and drain, abbreviated ED, can range from about 3 V to 150 V dc; most often it is 6 to 12 V dc The biasing arrangement in Fig 23-4A is preferred for weak-signal amplifiers, low-level amplifiers, and oscillators The scheme at B is more often employed in power amplifiers having substantial input signal amplitudes.

The foundation of all efficient and scalable databases is good design. DBAs often create database designs by performing needs and requirements analysis, creating a logical model, and then implementing the physical model. Larger organizations may have DBAs who specialize in database design.

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DATABASE APPLICATION DEVELOPMENT Many DBAs are application developers who specialize in writing code to access data stored in SQL Server databases. Although this is most commonly done using T-SQL, it can include writing code that is used to access SQL Server data. Many DBAs decide to

The graph of Fig 23-5 shows ID as a function of EG for a hypothetical N-channel JFET The drain voltage, ED, is assumed to be constant When EG is fairly large and negative, the JFET is pinched off, and no current flows through the channel As EG gets less negative, the channel opens up, and ID begins flowing As EG gets still less negative, the channel gets wider and ID increases As EG approaches the point where the S-G junction is at forward breakover, the channel conducts as well as it possibly can If EG becomes positive enough so the S-G junction conducts, some of the current in the channel leaks out through the gate This is usually an unwanted phenomenon

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make this their area of specialty, because of the depth of knowledge required to be a good database applications developer.

DEVELOPING AND MAINTAINING BEST PRACTICES Successful DBAs are proactive in their work, and one of the best ways to be proactive is